The Effect of Pitch Distance on the Statistics and Morphology of Through-Silicon Via Extrusion

In this work, we investigated the effect of pitch distance on statistical variation and morphology extrusion in Cu through-silicon vias (TSVs) underlying mechanisms. Extrusion statistics were obtained from TSV samples with two different distances. A notable increase magnitude was observed smaller pitch, yet spread largely unaffected. The morphologies extruded characterized categorized, a finiteelement analysis carried out to study stress deformation. results suggested that overlapping fields neighboring resulted larger small-pitch vias, which subsequently led higher extrusion. related operation deformation mechanisms under combined microstructure. via extrusion, similar both groups stochastic nature By using thin cap layer Ta suppress vacancy sources at top surface, adverse minimized pronounced reduction achieved